db -1 46 ap r il 2 0 0 9 , rev is ion a page 1 tak cheong ? semicon d u c tor 200mw sod-523 surface moun t very smal l ou tl in e fl at l e a d plastic pa ckage z e ner voltage re gula t o rs gr een produc t a b so lu te ma xi m u m r a ti ng s t a = 25 c unless oth er wise noted symb o l p a ra m e te r val u e units p d power dissipation 200 mw t st g storage temperature range -55 to +150 c t op r operating temperature range -55 to +150 c th e s e r a t i n g s are l i mi ting values a b o v e w h ich t h e s e r v ice a b ilit y of t h e di o de m a y be i m pai re d. spe c if i c a t i on fea t u r es : ? w i de z ener volt age range s el ec tion, 2.4v t o 75 v ? flat lead sod-5 23 sm all outl ine p l as tic p ac k age ? extre m e l y sm all so d- 5 23 package ? surfac e device ty pe m oun ting ? roh s co m p liant ? g r ee n em c ? m atte ti n( s n ) t e r m i n al f i nish ? band indi cates cathode electrical charact eris t ics t a = 25 c unless oth er wise noted v z @ i zt (v ol ts) de v ice t y pe device m a r k i ng mi n no m ma x i zt (m a ) z zt @ i zt ( ) ma x i zk (m a ) z zk @ i zk ( ) max i r @ v r ( a) ma x v r (v ol ts) m m 5 z2 v4 b 05 2.35 2.4 2.45 5 100 1 564 45 1 m m 5 z2 v7 b 15 2.65 2.7 2.75 5 100 1 564 18 1 m m 5 z3 v0 b 25 2.94 3.0 3.06 5 100 1 564 9 1 m m 5 z3 v3 b 35 3.23 3.3 3.37 5 95 1 564 4.5 1 m m 5 z3 v6 b 45 3.53 3.6 3.67 5 90 1 564 4.5 1 mm5 z 3 v9 b + 5 3.82 3.9 3.98 5 90 1 564 2.7 1 m m 5 z4 v3 b 65 4.21 4.3 4.39 5 90 1 564 2.7 1 m m 5 z4 v7 b 75 4.61 4.7 4.79 5 80 1 470 2.7 2 m m 5 z5 v1 b 85 5.00 5.1 5.20 5 60 1 451 1.8 2 m m 5 z5 v6 b 95 5.49 5.6 5.71 5 40 1 376 0.9 2 m m 5 z6 v2 b a5 6.08 6.2 6.32 5 10 1 141 2.7 4 m m 5 z6 v8 b b5 6.66 6.8 6.94 5 15 1 75 1.8 4 m m 5 z7 v5 b c5 7.35 7.5 7.65 5 15 1 75 0.9 5 m m 5 z8 v2 b d5 8.04 8.2 8.36 5 15 1 75 0.63 5 m m 5 z9 v1 b e5 8.92 9.1 9.28 5 15 1 94 0.45 6 m m 5 z10 v b f5 9.80 10 10.20 5 20 1 141 0.18 7 m m 5 z11 v b g5 10.78 11 11.22 5 20 1 141 0.09 8 m m 5 z12 v b h5 11.76 12 12.24 5 25 1 141 0.09 8 m m 5 z13 v b j5 12.74 13 13.26 5 30 1 160 0.09 8 m m 5 z15 v b k5 14.70 15 15.30 5 30 1 188 0.045 10.5 m m 5 z16 v b l5 15.68 16 16.32 5 40 1 188 0.045 11.2 m m 5 z18 v b m 5 17.64 18 18.36 5 45 1 212 0.045 12.6 electr ic a l sym b ol mm5z2v4b through mm5z75vb anode s od- 5 2 3 fl a t le a d catho d e http://
db -1 46 ap r il 2 0 0 9 , rev is ion a page 2 tak cheong ? semicon d u c tor elec tr ic al c h ara c t e ris t ics t a = 25 c unless oth er wise noted v z @ i zt (v ol ts) de v ice type de v ice m a r k i ng mi n no m ma x i zt (m a ) z zt @ i zt ( ) ma x i zk (m a ) z zk @ i zk ( ) max i r @ v r ( a) ma x v r (v ol ts) m m 5 z20 v b n5 19.60 20 2 0.40 5 55 1 212 0.045 14.0 m m 5 z22 v b p5 21.56 22 2 2.44 5 55 1 235 0.045 15.4 m m 5 z24 v b r5 23.52 24 2 4.48 5 70 1 235 0.045 16.8 m m 5 z27 v b s5 26.46 27 2 7.54 2 80 0.5 282 0.045 18.9 m m 5 z30 v b t5 29.40 30 3 0.60 2 80 0.5 282 0.045 21.0 m m 5 z33 v b u5 32.34 33 3 3.66 2 80 0.5 306 0.045 23.0 m m 5 z36 v b v5 35.28 36 3 6.72 2 90 0.5 329 0.045 25.2 m m 5 z39 v b x 5 38.22 39 3 9.78 2 130 0.5 329 0.045 27.3 m m 5 z43 v b y 5 42.14 43 4 3.86 2 150 0.5 353 0.045 30.1 m m 5 z47 v b z5 46.06 47 4 7.94 2 170 0.5 353 0.045 33.0 mm5 z 5 1 v b ? 5 49.98 51 5 2.02 2 180 0.5 376 0.045 35.7 m m 5 z56 v b =5 54.88 56 5 7.12 2 200 0.5 400 0.045 39.2 mm5 z 6 2 v b 5 60.76 62 6 3.24 2 215 0.5 423 0.045 43.4 m m 5 z68 v b >5 66.64 68 6 9.36 2 240 0.5 447 0.045 47.6 m m 5 z75 v b <5 73.50 75 7 6.50 2 255 0.5 470 0.045 52.5 v f forward voltage = 1 v maximum @ i f = 10 ma for all types no tes: 1. the z e ner v ol ta g e ( v z ) is tes ted under pulse cond i t i on of 1 0ms. 2. for d etailed infor m ation on p r ice, avail a b i l i ty an d d e livery of no m i n a l zener voltage s bet w een th e v o ltages sho w n a nd ti ghte r voltage tolerances, contact y o ur n earest t a k che o ng e l ectr oni cs re pr esentati ve. 3. the z ene r i m ped ance is derived f r o m the 60-c y c l e ac voltage, w h ich results w hen a n ac current having an rm s val ue equal t o 10% o f the dc z ene r curre nt ( i zt or i zk ) is s upe rim po s ed to i zt or i zk.
db -1 46 ap r il 2 0 0 9 , rev is ion a page 3 tak cheong ? semicon d u c tor r a tin g a n d c h ar a c t er is ti c c u r v es f i g . 1 typi c a l f o rward voltag e fig.2 effec t o f ze ne r vol ta ge o n z e n e r i m ped a n c e fi g . 4 t y pi ca l c ap aci t an c e fig.5 zener break do wn cha r act e ri st i cs fig.6 zener breakdow n char act e ri stics 0 50 10 0 15 0 20 0 25 0 0 25 5 0 75 100 1 25 1 50 17 5 2 00 t e m p e r at ur e [ ] p o w e r p as s i p at i o n, mw fig.3 power dis s ipatio n v s . ambien t t e mp.
db -1 46 ap r il 2 0 0 9 , rev is ion a page 4 tak cheong ? semicon d u c tor flat l ea d sod-52 3 package o u tline note: di m ensions are exclusi v e o f b u rrs, m o ld fla s h & t i e ba r extrus ions. fi g . 7 typi ca l leakge c u rrent
nu mber: db-1 00 apri l 1 4 , 2 008 / a di sc la i m er not i c e tak ch eo ng ? not i ce the infor m ation pr ese n te d in this do c u men t is for r e fer e n c e only. tak c h eo ng r e ser v es th e rig ht to make c h an ge s w i th ou t n o tice for the s p ecific a t io n o f the p r odu c t s displa y e d here i n. the p r odu c t lis te d her ein is desig ned to b e used w i th or dina ry ele c tro n ic equ ip me nt or d e vic e s, an d no t de s i g ned to be use d w i th e quip m en t or de v i ces w h ic h requir e high level of re liab ility and the malfun ctio n of w i th w ould dir e ctly e n d a n g er hu man life ( s u c h as me dical in str u m e nts, tr an s p or ta tion e q u i pme n t, ae ros p ace machine r y, nuclear-r eacto r contr o ll ers, f u el controlle rs a n d oth e r s a fety devices), t a k cheo ng sem ic o n ductor c o ., ltd., or anyone on its behalf , ass u mes no responsi bility or liability f o r an y damagers resulting from such impr o p e r u s e of s a le. this pu blication s u persed e s & r e p l aces all infor m ation re v i o u sly sup p lie d. fo r a d d i tio n a l in fo rm ation , p l eas e visit our w e bs ite h t tp:// w w w .takcheong.com , o r c o n s u l t y o u r ne ares t t a k c h eo ng ?s s a le s off i c e fo r f u rth e r a s s i s t an c e .
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